Particle penetration in Kane type semiconductor quantum dots

Hashimzade F. M., Babayev A. M., Tez S.

EUROPEAN PHYSICAL JOURNAL B, cilt.72, sa.1, ss.127-131, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 72 Sayı: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1140/epjb/e2009-00326-9
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.127-131
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.