Adsorption of oxygen and hydrogen on stepped Si(100) surface

Salman S., Katircioglu S.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol.213, no.2, pp.333-341, 1999 (SCI-Expanded) identifier


We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.