Adsorption of oxygen and hydrogen on stepped Si(100) surface

Salman, SA; Katircioglu, ŞENAY

doi:10.1002/(sici)1521-3951(199906)213:2<333::aid-pssb333>3.0.co;2-#

Adsorption of oxygen and hydrogen on stepped Si(100) surface

Atıf İçin Kopyala

Salman S., Katircioglu S.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.213, sa.2, ss.333-341, 1999 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 213 Sayı: 2
Basım Tarihi: 1999
Doi Numarası: 10.1002/(sici)1521-3951(199906)213:2<333::aid-pssb333>3.0.co;2-#
Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.333-341
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.