Adsorption of oxygen and hydrogen on stepped Si(100) surface

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Salman S., Katircioglu S.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol.213, no.2, pp.333-341, 1999 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 213 Issue: 2
• Publication Date: 1999
• Doi Number: 10.1002/(sici)1521-3951(199906)213:2<333::aid-pssb333>3.0.co;2-#
• Journal Name: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.333-341
• Middle East Technical University Affiliated: Yes

Abstract

We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.