The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films


Parlak M. , Ercelebi C.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.10, no.4, pp.313-319, 1999 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 4
  • Publication Date: 1999
  • Doi Number: 10.1023/a:1008980919971
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.313-319

Abstract

The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.