A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures

ŞAHİN A., GÜL M. S. , Uzgur F., KOCAMAN S.

Conference on Quantum Sensing and Nano Electronics and Photonics XVIII Part of SPIE Photonics West OPTO Conference, ELECTR NETWORK, 22 January - 24 February 2022, vol.12009 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 12009
  • Doi Number: 10.1117/12.2610186
  • Keywords: Infrared, Photodetector, nBn, InGaAs, SWIR, extended SWIR, SHORT-WAVE, RECOMBINATION, HGCDTE


In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.