A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures


ŞAHİN A., GÜL M. S., Uzgur F., KOCAMAN S.

Conference on Quantum Sensing and Nano Electronics and Photonics XVIII Part of SPIE Photonics West OPTO Conference, ELECTR NETWORK, 22 January - 24 February 2022, vol.12009 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 12009
  • Doi Number: 10.1117/12.2610186
  • Country: ELECTR NETWORK
  • Keywords: Infrared, Photodetector, nBn, InGaAs, SWIR, extended SWIR, SHORT-WAVE, RECOMBINATION, HGCDTE
  • Middle East Technical University Affiliated: Yes

Abstract

In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.