A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures

ŞAHİN A., GÜL M. S., Uzgur F., KOCAMAN S.

Conference on Quantum Sensing and Nano Electronics and Photonics XVIII Part of SPIE Photonics West OPTO Conference, ELECTR NETWORK, 22 Ocak - 24 Şubat 2022, cilt.12009 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 12009
  • Doi Numarası: 10.1117/12.2610186
  • Basıldığı Ülke: ELECTR NETWORK
  • Anahtar Kelimeler: Infrared, Photodetector, nBn, InGaAs, SWIR, extended SWIR, SHORT-WAVE, RECOMBINATION, HGCDTE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.