Characteristic features of an ionization system with semiconducting cathode

Salamov B., Altindal Ş., Özer M., Colakoglu K., Bulur E.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.2, no.3, pp.267-273, 1998 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 2 Issue: 3
  • Publication Date: 1998
  • Doi Number: 10.1051/epjap:1998192
  • Journal Name: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.267-273
  • Middle East Technical University Affiliated: No

Abstract

The characteristic features of a de discharge genera.ted between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.