Characteristic features of an ionization system with semiconducting cathode
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.2, no.3, pp.267-273, 1998 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 2 Issue: 3
- Publication Date: 1998
- Doi Number: 10.1051/epjap:1998192
- Journal Name: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.267-273
- Middle East Technical University Affiliated: No
Abstract
The characteristic features of a de discharge genera.ted between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.