Analysis of the standard deviation of surface potential fluctuations in MOS interface from DLTS spectra
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, vol.6, no.3, pp.261-271, 1998 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 6 Issue: 3
- Publication Date: 1998
- Doi Number: 10.1088/0965-0393/6/3/005
- Journal Name: MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.261-271
- Middle East Technical University Affiliated: No
Abstract
The surface potential fluctuations can have significant effects on both the magnitude and shape of the measured small-pulse DLTS spectrum. An increase in the dispersion parameter sigma(S) of the surface potential distribution, which is assumed to have a Gaussian form, leads to a reduction in the DLTS signal size, a shift of the peak position and a broadening of the peak shape. A computer program including the exponential temperature dependence of hole capture cross section, sigma(P) = sigma(0) exp(-Delta E-sigma/kT), was developed to analyse temperature-scan DLTS spectra of a MOS structure; in the evaluation procedure sigma(S), sigma(0) and Delta E-sigma are taken as fitting parameters. A bias dependence of sigma(S) has been found and an interpretation of this behaviour has been attempted in the light of random point charges (Brews) and patchwork (Nicollian-Goetzberger) models.