Decomposition of C-60 molecules on Si(100)(2 x 1) surface


Erkoc S. , Katircioglu S.

INTERNATIONAL JOURNAL OF MODERN PHYSICS C, vol.11, no.5, pp.1067-1076, 2000 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 5
  • Publication Date: 2000
  • Doi Number: 10.1142/s0129183100000900
  • Title of Journal : INTERNATIONAL JOURNAL OF MODERN PHYSICS C
  • Page Numbers: pp.1067-1076

Abstract

We have investigated the decomposition of C-60 molecules with low and high coverages on Si(100)(2 x 1) surface at elevated temperatures. We also investigated the decomposition of an isolated C-60 molecule. We employed molecular-dynamics simulation using a model potential. It has been found that C-60 decomposes on Si(100) surface after 1000 K in the case of low coverage (0.11), however in high coverage case (0.67), C-60 molecules decompose after 900 It. On the other hand, isolated C-60 molecule decomposes after 7500 K, interestingly it shows a phase change from 3D to 2D at higher temperatures.