Decomposition of C-60 molecules on Si(100)(2 x 1) surface

Erkoc S., Katircioglu S.

INTERNATIONAL JOURNAL OF MODERN PHYSICS C, cilt.11, sa.5, ss.1067-1076, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 5
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1142/s0129183100000900
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS C
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1067-1076
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We have investigated the decomposition of C-60 molecules with low and high coverages on Si(100)(2 x 1) surface at elevated temperatures. We also investigated the decomposition of an isolated C-60 molecule. We employed molecular-dynamics simulation using a model potential. It has been found that C-60 decomposes on Si(100) surface after 1000 K in the case of low coverage (0.11), however in high coverage case (0.67), C-60 molecules decompose after 900 It. On the other hand, isolated C-60 molecule decomposes after 7500 K, interestingly it shows a phase change from 3D to 2D at higher temperatures.