All InGaAs Unipolar Barrier Infrared Detectors

Uzgur F., Karaca U., Kizilkan E., Kocaman S.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, ss.1397-1403, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 65
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1109/ted.2018.2804483
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1397-1403
  • Anahtar Kelimeler: Compositional grading, delta doping, infrared detectors, InGaAs, nBn, unipolar barrier, LOW DARK-CURRENT, I-N PHOTODIODE, FERMI-LEVEL, SURFACE RECOMBINATION, NUMERICAL-SIMULATION, PASSIVATION, INP, IN0.53GA0.47AS, PHOTODETECTORS, LAYER
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Unipolar barrier detector design is a challenge for InGaAs material system since there is a lack of proper barrier material that blocks majority carriers and allows unimpeded flow of minority carriers. As a bandgap engineering solution, Al/Sb free all InGaAs unipolar barrier detectors have been numerically designed here by compositionally graded and delta-doped layers. Comparison with conventional heterojunction detectors results that there is at least one order of magnitude improvement in dark current without compromising any photoresponse performance. Detailed simulation characterization studies including sensitivity analysis with respect to the design parameters verify the robustness of the proposed structure.