Atomic and electronic structure of Bi/GaAs(001)-alpha 2(2x4)


Usanmaz D., ÇAKMAK M., ELLİALTIOĞLU S. Ş.

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.20, sa.26, 2008 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 20 Konu: 26
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1088/0953-8984/20/26/265003
  • Dergi Adı: JOURNAL OF PHYSICS-CONDENSED MATTER

Özet

We report an ab initio pseudopotential calculation for the atomic and electronic structure of Bi/GaAs(001)-alpha 2(2 x 4). Three structural models with Bi coverages of Theta = 1/4 are considered, containing one Bi dimer or two Bi-As mixed dimers. According to our calculations for this coverage, the atomic model of the Bi/GaAs(001)-(2 x 4) reconstruction is similar to the alpha 2 structure of the clean GaAs(001)-(2 x 4) surface in which the top As dimer is replaced by a Bi dimer. This result is in agreement with the most recent scanning tunneling microscopy work.