Optical anisotropy in GaSe

Seyhan A., Karabulut O., Akinoglu B., Aslan B., Turan R.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.40, no.9, pp.893-895, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 40 Issue: 9
  • Publication Date: 2005
  • Doi Number: 10.1002/crat.200410452
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.893-895
  • Keywords: GaSe, photoluminescence, optical anisotropy, SINGLE-CRYSTAL, BAND-EDGE, PHOTOLUMINESCENCE, SPECTRA
  • Middle East Technical University Affiliated: Yes


Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.