PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.52, sa.4, ss.603-606, 1991 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 52 Sayı: 4
- Basım Tarihi: 1991
- Doi Numarası: 10.1016/0022-3697(91)90154-r
- Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.603-606
- Anahtar Kelimeler: QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.