Atıf İçin Kopyala
ELSAID M., TOMAK M.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.52, sa.4, ss.603-606, 1991 (SCI-Expanded)
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Yayın Türü:
Makale / Tam Makale
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Cilt numarası:
52
Sayı:
4
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Basım Tarihi:
1991
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Doi Numarası:
10.1016/0022-3697(91)90154-r
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Dergi Adı:
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Sayfa Sayıları:
ss.603-606
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Anahtar Kelimeler:
QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
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Orta Doğu Teknik Üniversitesi Adresli:
Evet
Özet
The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.