PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol.52, no.4, pp.603-606, 1991 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 52 Issue: 4
- Publication Date: 1991
- Doi Number: 10.1016/0022-3697(91)90154-r
- Journal Name: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.603-606
- Keywords: QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
- Middle East Technical University Affiliated: Yes
Abstract
The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.