PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS

ELSAID M., TOMAK M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol.52, no.4, pp.603-606, 1991 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 52 Issue: 4
  • Publication Date: 1991
  • Doi Number: 10.1016/0022-3697(91)90154-r
  • Journal Name: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.603-606
  • Keywords: QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
  • Middle East Technical University Affiliated: Yes

Abstract

The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.