Copy For Citation
ELSAID M., TOMAK M.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol.52, no.4, pp.603-606, 1991 (SCI-Expanded)
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Publication Type:
Article / Article
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Volume:
52
Issue:
4
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Publication Date:
1991
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Doi Number:
10.1016/0022-3697(91)90154-r
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Journal Name:
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
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Journal Indexes:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Page Numbers:
pp.603-606
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Keywords:
QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
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Middle East Technical University Affiliated:
Yes
Abstract
The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.