PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS

ELSAID M., TOMAK M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.52, sa.4, ss.603-606, 1991 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 52 Sayı: 4
  • Basım Tarihi: 1991
  • Doi Numarası: 10.1016/0022-3697(91)90154-r
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.603-606
  • Anahtar Kelimeler: QUANTUM WELLS, SEMICONDUCTORS, SHALLOW IMPURITIES, PHOTOIONIZATION, MAGNETIC FIELD, SHALLOW DONOR IMPURITIES, MAGNETIC-FIELD, GAAS-GA1-XALXAS HETEROSTRUCTURES, ENERGY, BINDING
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.