Numerical analysis of long wavelength infrared HgCdTe photodiodes

Kocer H., Arslan Y., BEŞİKCİ C.

INFRARED PHYSICS & TECHNOLOGY, vol.55, no.1, pp.49-55, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 55 Issue: 1
  • Publication Date: 2012
  • Doi Number: 10.1016/j.infrared.2011.09.002
  • Journal Name: INFRARED PHYSICS & TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.49-55
  • Keywords: HgCdTe, Photodetector, TAT, 1/F NOISE, SIMULATION, PHOTODETECTORS, RECOMBINATION, HG1-XCDXTE, TRANSPORT, CURRENTS, MODEL
  • Middle East Technical University Affiliated: Yes

Abstract

We present a detailed investigation of the performance limiting factors of long and very long wavelength infrared (LWIR and VLWIR) p on n Hg1-xCdxTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination (G-R) mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. The results identify the relative strengths of the dark current generation mechanisms by numerically extracting the contribution of each G-R mechanism to the detector characteristics with various cut-off wavelengths (lambda(c)) and practically achievable material parameters.