Numerical analysis of long wavelength infrared HgCdTe photodiodes

Kocer H., Arslan Y., BEŞİKCİ C.

INFRARED PHYSICS & TECHNOLOGY, cilt.55, sa.1, ss.49-55, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 55 Sayı: 1
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.infrared.2011.09.002
  • Dergi Adı: INFRARED PHYSICS & TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.49-55
  • Anahtar Kelimeler: HgCdTe, Photodetector, TAT, 1/F NOISE, SIMULATION, PHOTODETECTORS, RECOMBINATION, HG1-XCDXTE, TRANSPORT, CURRENTS, MODEL
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We present a detailed investigation of the performance limiting factors of long and very long wavelength infrared (LWIR and VLWIR) p on n Hg1-xCdxTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination (G-R) mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. The results identify the relative strengths of the dark current generation mechanisms by numerically extracting the contribution of each G-R mechanism to the detector characteristics with various cut-off wavelengths (lambda(c)) and practically achievable material parameters.