Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces

Salman S., Katircioglu S., Erkoc S.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.15, sa.16, ss.2261-2274, 2001 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 16
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1142/s021797920100632x
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2261-2274
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D-B type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.