Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.15, no.16, pp.2261-2274, 2001 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 15 Issue: 16
- Publication Date: 2001
- Doi Number: 10.1142/s021797920100632x
- Journal Name: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.2261-2274
- Middle East Technical University Affiliated: Yes
Abstract
We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D-B type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.