Graphene/SrTiO3 hetero interface studied by X-ray photoelectron spectroscopy

KARAMAT S., KE C., Inkaya U. Y., AKRAM R., YILDIZ İ., Zaman S. S., ...More

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, vol.26, no.4, pp.422-426, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 26 Issue: 4
  • Publication Date: 2016
  • Doi Number: 10.1016/j.pnsc.2016.06.010
  • Journal Name: PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.422-426
  • Keywords: Chemical vapour deposition, X-ray photoelectron spectroscopy, Raman spectroscopy, Graphene, Valence band maximum, HIGH-QUALITY, MONOLAYER GRAPHENE, FREE GROWTH, FILMS, TRANSPARENT, NITRIDE, SRTIO3, OXIDE, RAMAN
  • Middle East Technical University Affiliated: Yes

Abstract

The present paper focuses on study of graphene and strontium titanate (SrTiO3 or STO) interface. An ambient pressure chemical vapour deposition (AP-CVD) setup is used to grow graphene on STO (110) substrates in the presence of methane, argon and hydrogen gases at 1000 degrees C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates. X-ray photoelectron spectroscopy (XPS) is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset (VBO) and conduction band offset (CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC (arranging pattern of carbon layers) stacked graphene layers. (C) 2016 Chinese Materials Research Society. Production and hosting by Elsevier B.V.