PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS


ELKAWNI M., TOMAK M.

SURFACE SCIENCE, cilt.260, ss.319-322, 1992 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 260
  • Basım Tarihi: 1992
  • Doi Numarası: 10.1016/0039-6028(92)90047-a
  • Dergi Adı: SURFACE SCIENCE
  • Sayfa Sayıları: ss.319-322

Özet

The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.