PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS

ELKAWNI M., TOMAK M.

SURFACE SCIENCE, cilt.260, ss.319-322, 1992 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 260
  • Basım Tarihi: 1992
  • Doi Numarası: 10.1016/0039-6028(92)90047-a
  • Dergi Adı: SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.319-322
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.