PHOTOIONIZATION OF IMPURITIES IN HETEROJUNCTIONS
SURFACE SCIENCE, cilt.260, ss.319-322, 1992 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 260
- Basım Tarihi: 1992
- Doi Numarası: 10.1016/0039-6028(92)90047-a
- Dergi Adı: SURFACE SCIENCE
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.319-322
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
The spectral dependence of the photoionization cross-section is calculated for shallow donors in GaAs/GaAlAs heterojunctions. The resulting spectra is found to be different for light polarized along and perpendicular to the growth direction. The calculations are repeated for both infinite- and finite-barrier models.