A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Azarifar M., Donmezer N.

MICROELECTRONICS RELIABILITY, vol.74, pp.82-87, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 74
  • Publication Date: 2017
  • Doi Number: 10.1016/j.microrel.2017.05.020
  • Journal Name: MICROELECTRONICS RELIABILITY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.82-87
  • Keywords: GaN-based HEMTs, Temperature, Thermal analysis, Thermal resistance, FIELD-EFFECT TRANSISTORS, SPREADING RESISTANCE, BOUNDARY RESISTANCE, TEMPERATURE, GAN, CONDUCTIVITY, SIMULATION, CHANNELS, DEVICES
  • Middle East Technical University Affiliated: Yes

Abstract

Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models. (C) 2017 Elsevier Ltd. All rights reserved.