Atıf İçin Kopyala
Eker S. U., Arslan Y., Kaldirim M., BEŞİKCİ C.
INFRARED PHYSICS & TECHNOLOGY, cilt.52, sa.6, ss.385-390, 2009 (SCI-Expanded)
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Yayın Türü:
Makale / Tam Makale
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Cilt numarası:
52
Sayı:
6
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Basım Tarihi:
2009
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Doi Numarası:
10.1016/j.infrared.2009.05.008
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Dergi Adı:
INFRARED PHYSICS & TECHNOLOGY
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Sayfa Sayıları:
ss.385-390
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Anahtar Kelimeler:
Quantum well infrared photodetectors, Focal plane arrays, Thermal imaging, WELL INFRARED PHOTODETECTORS, MU-M, PERFORMANCE, WAVELENGTH, GAIN, ABSORPTION
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Orta Doğu Teknik Üniversitesi Adresli:
Evet
Özet
Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity, when compared to the AlGaAs/CaAs QWIPs, AllnAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.