Origin and control of random macroscopic defects induced variability in low-temperature photoconductivity of layered <i>n</i>-InSe
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.37, sa.18, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 37 Sayı: 18
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10854-026-17835-3
- Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
To elucidate the origins of the dispersion in photoelectric parameters and characteristics observed among different indium monoselenide (n-InSe) crystal samples, a comprehensive experimental study was conducted. The investigation examined the dependence of the principal characteristics of intrinsic photoconductivity on several factors: the initial dark specific resistance measured at 77 K (rho 77 = 103-107 Omega & centerdot;cm); the chemical nature and concentration of introduced rare-earth element (REE) impurities (Gd, Ho, and Dy; NREE = 10-5-10-1 at.%); temperature (T = 77-350 K); the magnitude of an externally applied galvanic electric field (ranging from extremely weak fields up to E = 3 & times; 103 V/cm); and both the intensity (up to 5 & times; 102) and wavelength (0.40-1.50 mu m) of incident light. It has been established that the scatter of photoconductivity characteristics from sample to sample in pure n-InSe crystals, detected in the low-temperature region (at T <= 250 K), is due to the occurrence of random macroscopic defects (RMD) in these samples during their manufacture due to the weakness of the interlayer bond. By changing the content of introduced rare-earth impurities (NREE), the magnitude of the injecting electric field applied to the studied sample, and the temperature, it is possible to control the influence of these RMD on the photoconductivity characteristics, and at NREE approximate to 10-1 at.%, reduce it to zero.