InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

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Sheremet V., Gheshlaghi N., Sozen M., Elci M., Sheremet N., AYDINLI A., ...More

SUPERLATTICES AND MICROSTRUCTURES, vol.116, pp.253-261, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 116
  • Publication Date: 2018
  • Doi Number: 10.1016/j.spmi.2018.02.002
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.253-261
  • Keywords: Light-emitting diode, Step-graded electron injector, Stress compensation layer, InGaN/GaN, LIGHT-EMITTING-DIODES, QUANTUM-WELLS, EFFICIENCY, EMISSION, RECOMBINATION, LOCALIZATION, LUMINESCENCE, DYNAMICS, ORIGIN
  • Middle East Technical University Affiliated: No

Abstract

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.