The formation of smooth, defect-free, stoichiometric silicon carbide films from a polymeric precursor

Pitcher M., Bianconi P.

Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2006 MRS Spring Meeting, San-Francisco, Kostarika, 18 - 20 Nisan 2006, cilt.911, ss.295-297 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 911
  • Basıldığı Şehir: San-Francisco
  • Basıldığı Ülke: Kostarika
  • Sayfa Sayıları: ss.295-297
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Silicon carbide (SiC) materials, which are used in a variety of applications, are often produced using powder processing, sintering or bulk crystal growing techniques. The formation of silicon carbide films or shaped products, via these methods, is often extremely difficult and/or requires high temperatures. Here we report the synthesis and characterization of a polymeric precursor, Polymethylsilyne (PMSy), and it subsequent conversion to beta-SiC. The polymer is simple to synthesize and is easily manipulated in air. The ceramic produced from PMSy is extremely pure, stoichiometric SiC and is produced in high yields (up to 85%). The ceramic films that can be produced from PMSy on a variety of substrates, from ceramics to metals, are again stoichiometric SiC and are smooth, continuous and defect free; possibly enabling the use of these films in electronic applications.