Negative photoconductivity and infrared quenching effects in rare-earth-doped n-InSe
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Publication Date: 2026
- Doi Number: 10.1142/s0217979226501870
- Journal Name: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Compendex, INSPEC, zbMATH, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO), Technology Collection (ProQuest)
- Middle East Technical University Affiliated: Yes
Abstract
The features of negative photoconductivity (NPhC), background illumination-induced impurity photoconductivity (IIP), and optical quenching of intrinsic photoconductivity in pure and rare-earth elements (REEs)-doped n-InSe crystals were studied in order to identify new possibilities for practical application in optoelectronics. At low concentrations (N-REE < 1.0 at.%), REEs influence the degree of spatial inhomogeneity in the studied samples without inducing intra-center effects, which at higher concentrations can significantly affect their electrical, luminescent, and photoelectric properties. This research focuses on REEs such as holmium (Ho) and erbium (Er), introduced at varying concentrations (N-REE = 10(-5)-10(-1) at.%) into n-InSe crystals (n-InSe < Ho > and n-InSe < Er >). This selection of materials enables a comparative analysis of the experimental results to determine the dependence of the observed photoelectric phenomena on both the concentration and the chemical nature of the REE dopant. Based on a comprehensive set of experimental studies, the feasibility of developing highly sensitive, next-generation tandem infrared (IR) photodetectors has been demonstrated. These detectors, based on n-InSe < Ho > and n-InSe < Er > crystals with REE concentrations in the range 5 & sdot; 10(-2 )<= N <= 10(-1 )at.%, operate effectively within the optical spectral ranges of 1.20-1.90 mu m and 2.00-3.60 mu m.