High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

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Atıf İçin Kopyala

Navarro A., Rivera C., Pereiro J., Munoz E., Imer B., DenBaars S. P., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.94, sa.21, 2009 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 94 Sayı: 21
• Basım Tarihi: 2009
• Doi Numarası: 10.1063/1.3143230
• Dergi Adı: APPLIED PHYSICS LETTERS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Anahtar Kelimeler: current density, electrical resistivity, energy gap, gallium compounds, III-V semiconductors, metal-semiconductor-metal structures, photodetectors, polarisation, sapphire, wide band gap semiconductors, ULTRAVIOLET DETECTORS
• Orta Doğu Teknik Üniversitesi Adresli: Hayır

Özet

The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 mu m, dark current density and responsivity at 30 V are 0.3 nA/mm(2) and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.