Effects of surface potential fluctuations on DLTS of MOS structure

Ozder S., Atilgan I., Katircioglu B.

SOLID-STATE ELECTRONICS, vol.39, no.2, pp.243-249, 1996 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 39 Issue: 2
  • Publication Date: 1996
  • Doi Number: 10.1016/0038-1101(95)00122-0
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.243-249
  • Middle East Technical University Affiliated: No


Although the conventional large signal deep-level transient spectroscopy (DLTS) technique is immune to surface potential fluctuations resulting from interface charge inhomogeneities in a MOS structure, in energy resolved, small signal DLTS, the eventual surface potential fluctuation should be considered. In this paper, the effect of the potential fluctuation on the temperature-scan DLTS signal for a given gate bias has been carried out. In fact, this effect shifts the DLTS peak position to lower temperatures and decreases the peak amplitude, leading to an apparent energy position and lower Di, values, respectively.