A study of wet oxidized A1(x)Ga(1-x)As for integrated optics


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BEK A. , Aydinli A., Champlain J., Naone R.

IEEE PHOTONICS TECHNOLOGY LETTERS, vol.11, no.4, pp.436-438, 1999 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 4
  • Publication Date: 1999
  • Doi Number: 10.1109/68.752540
  • Title of Journal : IEEE PHOTONICS TECHNOLOGY LETTERS
  • Page Numbers: pp.436-438
  • Keywords: integrated optics, optical waveguides, oxidation, polarization splitters, ALXGA1-XAS

Abstract

An investigation of wet oxidized Al-x Ga1-xAs layers in integrated optical applications is reported, Refractive index and thickness shrinkage of wet oxidized AI(x)Ga(1-x)As layers are measured using spectroscopic ellipsometry, A Cauchy fit to the refractive index is found in the wavelength range between 0.3 and 1.6 mu m. The refractive index at 1.55 mu m is found to be 1.66+/-0.01 with little dispersion around 1.55 mu m. Very low loss single-mode waveguides with metal electrodes showing very low polarization dependence of loss coefficient are fabricated using wet oxidized AlxGa1-xAs layers as upper cladding, Optical polarization splitters are also designed and fabricated from the same type of waveguides taking advantage of increased birefringence, Designs utilizing wet oxidized AlxGa1-xAs are compared with conventional designs using only compound semiconductor heterostructures.