Akademik Veri Yönetim Sistemi
Materials Research Society (MRS) Fall 2021, Massachusetts, Amerika Birleşik Devletleri, 6 - 08 Aralık 2021, ss.1
: Ideal properties for transparent thin film heaters (TTFHs) can be summarized as low sheet
resistance, high transmittance in visible range and high thermal stability. Generally, the material of choice
converts the electrical energy into heat by “Joule Heating Mechanism”. Therefore, achieved maximum
temperature is related with applied voltage, sheet resistance and heat loss. Also, uniformity of such material is
important due to heating consistency and stability of the entire film. Oxide films grown by atomic layer
deposition (ALD) has advantages such as high uniformity, thickness control at angstrom level and excellent
step coverage due to its self-limiting growth mechanisms . Aluminum doped zinc oxide (AZO) thin films growth
by ALD expected to show ideal properties for a TTFH. The studies suggest that the AZO thin films are suitable
to be used as heater on different substrates with different production methods, reason being chemical and
thermal stability of AZO .
In this work, Al doped and undoped ZnO thin films grown by ALD were demonstrated as TTFH. The growth of
the thin films were done on quartz substrates. Growth temperature for AZO was varied between 175 and 225
°C, Al doping was kept between 2-4 atomic percent, and thickness was kept constant as 100 nm for all
samples. The varying temperature and doping levels were utilized to establish relation between doping
concentration of aluminum on the performance of the thin films. The variables for ZnO were pulse/purge
variations, and growth temperatures. Growth temperature for ZnO was in between 125 and 150 °C, and DI
water pulse and Diethylzinc (DEZ- Zn(C H ) ) pulse was selected as 15 ms and purge time was kept at 10s.
Different growth temperatures were chosen to vary stoichiometry of ZnO. Different temperatures were utilized
to establish relation between ZnO thin films. Also, one of the main purposes was comparing Al dopped and
undoped ZnO thin films with similar sheet resistance to display Al effect to TTFH performance such as
maximum temperature and overall responsiveness. The lowest resistivity values achieved with AZO sample
with 3.5 Al atomic percent as 3.3 10 Ω.cm while the each produced thin films transparency were over 85% in
spectral range. The expected maximum temperature values were over 70°C with applied fairly low voltage
(≤10V) with heating rate of 20 °C/s