Silicon heterostructure solar cell based on p-type amorphous silicon(aSi:H) poses fundamental performance limitations due to the narrower band gap of aSi: H and the presence of band gap defects states. Such p-type a-Si: H layer can be replaced by novel carrier-selective Transition Metal Oxide (TMO) films such as Molybdenum oxide(MoOx) that offers higher work function and reduced parasitic absorption and thus enhanced photovoltaic performance. In this work, Silvaco TCAD simulation of Partial Dopant-Free Asymmetric Silicon Heterostructure Solar Cell(P-DASH) based on MoOx hole-selective contact has been performed by analyzing different design parameters. It has been observed that higher work function for MoOx results in the formation of reduced Schottky barrier for holes and blocking contact for electrons at cSi/MoOx interface. Coupled with an optimized MoOx thickness and BSF doping concentration, an open-circuit voltage of 724 mV, short-circuit current density of 38.7 mA/cm(2), fill factor of 78%, and Power conversion efficiency(eta) of 22.07% for 4.6 Omega. cm n-type wafer has been numerically demonstrated.