The electronic band structure of InN, InAs and InSb compounds

Mohammad R., KATIRCIOĞLU Ş., El-Hasan M.

JOURNAL OF MATERIALS SCIENCE, cilt.43, sa.8, ss.2935-2946, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 43 Sayı: 8
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1007/s10853-007-1794-4
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2935-2946
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.