The electronic band structure of InN, InAs and InSb compounds

Mohammad R., KATIRCIOĞLU Ş., El-Hasan M.

JOURNAL OF MATERIALS SCIENCE, vol.43, no.8, pp.2935-2946, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 43 Issue: 8
  • Publication Date: 2008
  • Doi Number: 10.1007/s10853-007-1794-4
  • Journal Name: JOURNAL OF MATERIALS SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2935-2946
  • Middle East Technical University Affiliated: Yes

Abstract

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.