The electronic band structure of InN, InAs and InSb compounds


Mohammad R., KATIRCIOĞLU Ş. , El-Hasan M.

JOURNAL OF MATERIALS SCIENCE, vol.43, no.8, pp.2935-2946, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 43 Issue: 8
  • Publication Date: 2008
  • Doi Number: 10.1007/s10853-007-1794-4
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE
  • Page Numbers: pp.2935-2946

Abstract

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.