Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors

Ozer Y., KOCAMAN S.

JOURNAL OF APPLIED PHYSICS, cilt.122, sa.14, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 122 Sayı: 14
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1063/1.5000116
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We show suppression of generation-recombination dark current that leads to an increase in the operating temperature nearly 40K (from similar to 85K to similar to 125 K, tau(SRH) = 200 ns) with diffusion limited performance of alternative substrate multiwafer infrared HgCdTe infrared photodetectors with a cut-off wavelength of 5 mu m. Enhancement has been achieved by shifting the depletion region into an n type wide bandgap material. An in-house numerical model, which solves Poisson, continuity, and current equations for electrons and holes, is utilized for high precision in electrical and optical characterization of the detector. Composition and doping levels are optimized so that the collection of photo-generated carriers is not disturbed and the quantum efficiency is kept high. Published by AIP Publishing.