SHALLOW IMPURITIES IN HETEROJUNCTIONS

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Copy For Citation

ELKAWNI M., TOMAK M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol.53, no.2, pp.305-308, 1992 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 53 Issue: 2
• Publication Date: 1992
• Doi Number: 10.1016/0022-3697(92)90060-q
• Journal Name: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.305-308
• Middle East Technical University Affiliated: Yes

Abstract

The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.