SHALLOW IMPURITIES IN HETEROJUNCTIONS


ELKAWNI M., TOMAK M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.53, sa.2, ss.305-308, 1992 (SCI-Expanded) identifier identifier

Özet

The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.