SHALLOW IMPURITIES IN HETEROJUNCTIONS


ELKAWNI M., TOMAK M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.53, ss.305-308, 1992 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 53 Konu: 2
  • Basım Tarihi: 1992
  • Doi Numarası: 10.1016/0022-3697(92)90060-q
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Sayfa Sayıları: ss.305-308

Özet

The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.