A study of the effect of γ-radiation on electrophysical characteristics of Yb-doped GaS single crystal

Madatov R., TURAN R., Tagiev T., Khaligzadeh A. S., Genç A., Gulen E., ...Daha Fazla

Applied Physics A: Materials Science and Processing, cilt.131, sa.12, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 131 Sayı: 12
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1007/s00339-025-08961-6
  • Dergi Adı: Applied Physics A: Materials Science and Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Anahtar Kelimeler: Acceptor levels, Activation energy, Donor levels, Electrical conductivity, Hall coefficient, Local energy levels, Mobility, Radiation defects, Thermal ionisation
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Doping GaS single crystals with Yb atoms introduces donor and acceptor levels, which dramatically change the electrical conductivity in the temperature range 125–300 K. Additional defect levels are added by gamma irradiation; at lower doses (20 krad), it reduces conductivity and shifts the thermal quenching temperature where conductivity decreases due to non-radiative recombination of carriers, while at larger doses (50 krad and above), it significantly alters both conductivity and activation energies. Conductivity is enhanced by light exposure (λ = 445 nm), demonstrating the intricate relationships between radiation-induced defects, temperature effects, and Yb doping.