A study of the effect of γ-radiation on electrophysical characteristics of Yb-doped GaS single crystal

Madatov R., TURAN R., Tagiev T., Khaligzadeh A. S., Genç A., Gulen E., ...More

Applied Physics A: Materials Science and Processing, vol.131, no.12, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 131 Issue: 12
  • Publication Date: 2025
  • Doi Number: 10.1007/s00339-025-08961-6
  • Journal Name: Applied Physics A: Materials Science and Processing
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Keywords: Acceptor levels, Activation energy, Donor levels, Electrical conductivity, Hall coefficient, Local energy levels, Mobility, Radiation defects, Thermal ionisation
  • Middle East Technical University Affiliated: Yes

Abstract

Doping GaS single crystals with Yb atoms introduces donor and acceptor levels, which dramatically change the electrical conductivity in the temperature range 125–300 K. Additional defect levels are added by gamma irradiation; at lower doses (20 krad), it reduces conductivity and shifts the thermal quenching temperature where conductivity decreases due to non-radiative recombination of carriers, while at larger doses (50 krad and above), it significantly alters both conductivity and activation energies. Conductivity is enhanced by light exposure (λ = 445 nm), demonstrating the intricate relationships between radiation-induced defects, temperature effects, and Yb doping.