Comparison of Two Alternative Silicon-On-Glass Microfabrication Processes for MEMS Inertial Sensors

Torunbalci M. M., Tatar E., Alper S. E., AKIN T.

25th Eurosensors Conference, Athens, Yunanistan, 4 - 07 Eylül 2011, cilt.25 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 25
  • Doi Numarası: 10.1016/j.proeng.2011.12.221
  • Basıldığı Şehir: Athens
  • Basıldığı Ülke: Yunanistan
  • Anahtar Kelimeler: Silicon-On-Glass (SOG) process, MEMS inertial sensors
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

This paper presents experimental comparison of a modified silicon-on-glass (M-SOG) process to a previously-reported classical SOG (C-SOG) process based on the use of SOI wafers, yielding a stress free < 111 > silicon structural layer with desired structure thickness. The basic difference between these processes is the sequence of the step at which the silicon microstructures are defined by DRIE, making M-SOG more robust against critical dimension (CD) variations. Overall, M-SOG provides a simple, high yield, reliable, and robust solution for producing high performance MEMS inertial sensors, and these advantages are experimentally verified over C-SOG, both completed by following the identical process parameters and by using the same mask set. (C) 2011 Published by Elsevier Ltd.