Comparison of Two Alternative Silicon-On-Glass Microfabrication Processes for MEMS Inertial Sensors


Torunbalci M. M. , Tatar E., Alper S. E. , AKIN T.

25th Eurosensors Conference, Athens, Greece, 4 - 07 September 2011, vol.25 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 25
  • Doi Number: 10.1016/j.proeng.2011.12.221
  • City: Athens
  • Country: Greece
  • Keywords: Silicon-On-Glass (SOG) process, MEMS inertial sensors

Abstract

This paper presents experimental comparison of a modified silicon-on-glass (M-SOG) process to a previously-reported classical SOG (C-SOG) process based on the use of SOI wafers, yielding a stress free < 111 > silicon structural layer with desired structure thickness. The basic difference between these processes is the sequence of the step at which the silicon microstructures are defined by DRIE, making M-SOG more robust against critical dimension (CD) variations. Overall, M-SOG provides a simple, high yield, reliable, and robust solution for producing high performance MEMS inertial sensors, and these advantages are experimentally verified over C-SOG, both completed by following the identical process parameters and by using the same mask set. (C) 2011 Published by Elsevier Ltd.