Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

KARABULUT O., Parlak M., Turan R., SERİNCAN U., Akinoglu B. G.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.41, sa.3, ss.243-249, 2006 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 41 Sayı: 3
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1002/crat.200510568
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.243-249
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo-excitation intensity also support continuous distribution of localized states in the band gap.