Coalescence of few layer graphene grains grown by chemical vapor deposition and their stacking sequence


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Karamat S., Sonusen S., Dede M., Uysalli Y., Ozgonul E. , ORAL A.

JOURNAL OF MATERIALS RESEARCH, cilt.31, ss.46-54, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 31 Konu: 1
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1557/jmr.2015.350
  • Dergi Adı: JOURNAL OF MATERIALS RESEARCH
  • Sayfa Sayıları: ss.46-54

Özet

Few layer graphene is attractive due to its extraordinary electronic and optical properties, which are strongly influenced by the orientation between the layers called as stacking sequence. It is challenging to synthesize high quality large size single or multi layer graphene crystals on the metal catalyst using chemical vapor deposition technique. The present work is about synthesis of few layer graphene grains on platinum foil using ambient pressure chemical together vapor deposition technique. The main focus is how the different grains coalesced and maintain the stacking sequence. Different characterization techniques are used to analyze the grains when they are in the process of merging to make a bigger grain. Scanning electron microscopy clearly shows different stacking sequences and merging of different nucleation sites of different grains. Interestingly, different stacking sequences are observed during the process of coalescence of grains. Raman spectroscopy gives accurate information about the number of layers and their stacking sequence. We observed Bernal AB and twisted layer stacking in the grains when they were combining together to grow into a bigger size. The full width at half maximum (FWHM) value of 2D Raman peaks appeared in the range of 52-69 cm(-1) which shows an increase from the value of single layer graphene (30.18 cm(-1)) and identifies Bernal stacking in grains. For twisted stacking FWHM values lie in the range of 19-32 cm(-1).