High Power K-band GaN on SiC CPW Monolithic Power Amplifier

Cengiz O., ŞEN Ö., ÖZBAY E.

9th European Microwave Integrated Circuit Conference (EuMIC), Rome, Italy, 6 - 07 October 2014, pp.548-551 identifier

  • Publication Type: Conference Paper / Full Text
  • City: Rome
  • Country: Italy
  • Page Numbers: pp.548-551
  • Keywords: AlGaN/GaN, HEMTs, MMIC power amplifier, radiation, space
  • Middle East Technical University Affiliated: Yes


This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 mu m HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.