All SiC PWM rectifier-based off-board ultrafast charger for heavy electric vehicles

Yildirim D., Ozturk S., ÇADIRCI I., ERMİŞ M.

IET POWER ELECTRONICS, vol.13, no.3, pp.483-494, 2020 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 3
  • Publication Date: 2020
  • Doi Number: 10.1049/iet-pel.2019.0583
  • Journal Indexes: Science Citation Index Expanded, Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.483-494
  • Keywords: Schottky diodes, wide band gap semiconductors, power MOSFET, power factor, power semiconductor switches, PWM rectifiers, silicon compounds, electric vehicle charging, battery powered vehicles, computer simulation, lithium compounds, Li2TiO3, SiC, power 200, 0 kW, frequency 10, 0 kHz, voltage 400, 0 V to 1000, 0 V, computer simulations, thermal limitations, input current total demand distortion, switching frequency, UFC configurations, power circuit layout, power factors, SiC PWM rectifier-based off-board ultrafast charger, SiC power MOSFET modules, SiC Schottky diode, SiC power metal oxide semiconductor field effect transistor, reverse conduction characteristic, lithium titanate batteries, silicon carbide pulse width modulation rectifier-based off-board ultrafast chargers, heavy electric vehicles, BATTERY CHARGER, HIGH-EFFICIENCY, DESIGN, CONVERTER, DENSITY


This study deals with the design, implementation and experimental performance of all silicon carbide pulse width modulation (SiC PWM) rectifier-based off-board ultrafast chargers (UFCs) for lithium titanate batteries of heavy electric vehicles. Different UFC configurations are proposed, depending upon the nominal battery voltage (400-1000 V DC) and charge capacity. Operating principles and control of UFC at unity and leading power factors are assessed and corresponding operating modes of PWM rectifier are discussed. The combined effect of reverse conduction characteristic of SiC power metal oxide semiconductor field effect transistor (MOSFET) and built-in SiC Schottky diode is taken into account in all the analyses carried out. The operating performance of the developed UFC, such as the switching characteristics of SiC power MOSFET modules, efficiency, input current total demand distortion (ITDD), and thermal limitations of the SiC PWM rectifier have been assessed for various charge voltages and charge capacities, both by computer simulations and laboratory tests. Power circuit layout considerations of the proposed system are also given in this study. Excellent performance results for 10 kHz switching frequency are obtained from the developed 200 kW UFC, with operating efficiencies higher than 98.5% for all charging rates up to five times the battery capacity, and ITDDs <2.2% for the whole operating range.