Computer Simulations on the grain boundary grooving and cathode edge displacement in bamboo-like metallic interconnects

Ogurtani T. O., Akyildiz O.

Symposium on Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects held at the 2006 MRS Spring Meeting, San-Francisco, Costa Rica, 18 - 21 April 2006, vol.914, pp.121-122 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 914
  • City: San-Francisco
  • Country: Costa Rica
  • Page Numbers: pp.121-122
  • Middle East Technical University Affiliated: Yes


The process of grain boundary (GB) grooving and cathode edge displacement invoked by the surface drift-diffusion along the sidewalls in sandwich type thin film bamboo lines are simulated by introducing a new mathematical model. In the absence of the electric field, the computer studies on the triple junction kinetics show that it obeys the first order reaction kinetics at early transient stage, which is followed by the familiar time law as t(1/4), at the steady state regime. The applied electric field (EF) in constant current experiments modifies this time law drastically above the well-defined electron wind intensity (EWI) threshold, and puts an upper limit for the groove depth, which decreases monotonically with EWI. Below the threshold level, the capillary regime predominates, and EF has little effect on the general kinetics of GB grooving, other then the linear increase in total elapsed time with EWI.