Advanced Design of Schottky Photodiodes in Bulk CMOS for High Speed Optical Receivers

Orsel O. E., ERDİL M., KOCAMAN S.

IEEE JOURNAL OF QUANTUM ELECTRONICS, vol.56, no.1, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 56 Issue: 1
  • Publication Date: 2020
  • Doi Number: 10.1109/jqe.2019.2959806
  • Journal Name: IEEE JOURNAL OF QUANTUM ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Middle East Technical University Affiliated: Yes

Abstract

This paper provides theoretical insight on how circular Schottky photodiodes in bulk CMOS can be optimized for certain integrated receiver applications. An optimal photodiode size is analytically demonstrated and the effects of a metal plate reflector are simulated using a transfer-matrix method, both for frontside and backside illumination. Finally, a distributed circuit model is presented, which deviates from the classical lumped model for large photodiodes or sheet resistances. The presented methodologies can also be extended to other types of photodetectors.