Electronic structure of modulation-doped heterostructures: electric field effects

Creative Commons License

Ilaiwi K., El-Kawni M., Tomak M.

SUPERLATTICES AND MICROSTRUCTURES, vol.24, no.1, pp.61-67, 1998 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 24 Issue: 1
  • Publication Date: 1998
  • Doi Number: 10.1006/spmi.1996.0443
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.61-67
  • Keywords: heterostructures, polarization, GaAs/Ga1-xAlxAs, SUBBAND STRUCTURE, QUANTUM-WELL, GAS, MBE, HETEROJUNCTIONS, POLARIZATION, SCATTERING, SI
  • Middle East Technical University Affiliated: Yes

Abstract

Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented. (C) 1998 Academic Press.