Electronic structure of modulation-doped heterostructures: electric field effects

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Ilaiwi K., El-Kawni M., Tomak M.

SUPERLATTICES AND MICROSTRUCTURES, cilt.24, sa.1, ss.61-67, 1998 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 24 Sayı: 1
  • Basım Tarihi: 1998
  • Doi Numarası: 10.1006/spmi.1996.0443
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.61-67
  • Anahtar Kelimeler: heterostructures, polarization, GaAs/Ga1-xAlxAs, SUBBAND STRUCTURE, QUANTUM-WELL, GAS, MBE, HETEROJUNCTIONS, POLARIZATION, SCATTERING, SI
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Self-consistent energy levels of electrons in modulation-doped GaAs/Ga1-xAlxAs heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented. (C) 1998 Academic Press.