Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2


Ozdemir S., Suleymanov R.

SOLID STATE COMMUNICATIONS, vol.101, no.5, pp.309-312, 1997 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 101 Issue: 5
  • Publication Date: 1997
  • Doi Number: 10.1016/s0038-1098(96)00613-8
  • Title of Journal : SOLID STATE COMMUNICATIONS
  • Page Numbers: pp.309-312

Abstract

The shift in the commensurate to incommensurate phase transition point as a result of thermocycling between the commensurate and incommensurate phases in the layered ferroelectric semiconductor TlInS2 is investigated, It is shown that the shifting of the phase transition point is strongly dependent on the intensity of the incident light of illumination. The observed effect is explained by the pinning process which is mole effective under illumination. Copyright (C) 1996 Elsevier Science Ltd