Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2


Ozdemir S., Suleymanov R.

SOLID STATE COMMUNICATIONS, cilt.101, ss.309-312, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 101 Konu: 5
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1016/s0038-1098(96)00613-8
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Sayfa Sayıları: ss.309-312

Özet

The shift in the commensurate to incommensurate phase transition point as a result of thermocycling between the commensurate and incommensurate phases in the layered ferroelectric semiconductor TlInS2 is investigated, It is shown that the shifting of the phase transition point is strongly dependent on the intensity of the incident light of illumination. The observed effect is explained by the pinning process which is mole effective under illumination. Copyright (C) 1996 Elsevier Science Ltd