Akademik Veri Yönetim Sistemi
Materials Science in Semiconductor Processing, cilt.190, 2025 (SCI-Expanded, Scopus)
The sensing mechanism of semiconductor metal oxide (SMOX) gas sensors has a complex nature due to the physical and chemical phenomena involved. In this study, a comprehensive transient mathematical model was developed considering mass transfer, detailed surface reactions, electron transfer, and DC electric current flow between electrodes. The model was tested for the response of n-type SnO2 thick film sensors to CO gas in a dry-air environment. The results provide critical insights into the effects of crucial parameters like operating temperature, film thickness, and pore size on the two main competing mechanisms: the relative rates of surface reduction/oxidation and the rates of diffusion and surface reaction of CO. The simulation results were compared with the experimental response profiles of 7 μm thick SnO2 film for three different step pulses of magnitudes of 400 ppm, 800 ppm, and 1500 ppm CO concentrations under a continuous flow of dry air at T = 528K.