Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array

Ozer S., Cellek O., Besikci C.

INFRARED PHYSICS & TECHNOLOGY, cilt.47, ss.115-118, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 47
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.infrared.2005.02.016
  • Sayfa Sayıları: ss.115-118


We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs. (c) 2005 Elsevier B.V. All rights reserved.