Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80-380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott's parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature region. Photoconductivity of the PANI-BPS35 composite films having 10, 20, and 40 weight percent conductive filler under various illumination intensities was also studied. Photocurrent of the composite films increased with increasing both polyaniline weight fraction and temperature. Finally, the effect of doping on both electrical conductivity and the photoconductivity of the composite films was investigated.