Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy

Creative Commons License

Misra P., Behn U., Brandt O., Grahn H., Imer B., Nakamura S., ...More

APPLIED PHYSICS LETTERS, vol.88, no.16, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 88 Issue: 16
  • Publication Date: 2006
  • Doi Number: 10.1063/1.2198086
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Middle East Technical University Affiliated: No

Abstract

We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. The exciton transition energies of an unstrained, high-quality C-plane GaN film are used to accurately determine the crystal-field and spin-orbit splitting energies. For films with a nonpolar orientation, the resonant features observed in the PR spectra exhibit a strong in-plane polarization anisotropy and different transition energies from the ones measured in the C-plane GaN film. The deformation potential D-5 is accurately determined from four GaN films with a nonpolar orientation using the measured energies together with the polarization properties and out-of-plane strain. (c) 2006 American Institute of Physics.