Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction


OCAK Y. S. , Kulakci M., TURAN R. , KILIÇOĞLU T., GÜLLÜ Ö.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, ss.6631-6634, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 509 Konu: 23
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.jallcom.2011.03.114
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Sayfa Sayıları: ss.6631-6634

Özet

AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.