Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

OCAK Y. S., Kulakci M., TURAN R., KILIÇOĞLU T., GÜLLÜ Ö.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.509, no.23, pp.6631-6634, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 509 Issue: 23
  • Publication Date: 2011
  • Doi Number: 10.1016/j.jallcom.2011.03.114
  • Journal Name: JOURNAL OF ALLOYS AND COMPOUNDS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.6631-6634
  • Middle East Technical University Affiliated: Yes

Abstract

AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.