A High Linearity Broadband Gain Block/LNA MMIC with Diode Predistortion in GaAs pHEMT Technology

Memioglu O., Gundel A.

18th Mediterranean Microwave Symposium (MMS), İstanbul, Turkey, 31 October - 02 November 2018, pp.120-123 identifier

  • Publication Type: Conference Paper / Full Text
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.120-123
  • Middle East Technical University Affiliated: Yes


This paper presents a high linearity broadband low noise amplifier/gain-block MMIC based on shunt feedback and shunt peaking circuit technique. The design targets DC-1.0 Gift band with excellent noise figure performance. At the input a diode based predistorter is used to further enhance the lineratity of the circuit. A two-stage amplifier is implemented in 0.25 m InGaAs E/D-mode plIEMT technology demonstrates a high gain and an excellent bandwidth along with high-linearity. This amplifier topology seems an attractive choice 14 applications requiring wide-band, high gain, and high linearity amplification as an alternative to distributed amplifier topologies. Additionally, an excellent noise performance is achieved demonstrating < 3.5 dB noise figure in the frequency band of DC-10 Gilz. A two-stage amplifier provides 20 1.0 dB of small-signal gain with excellent linearity of output IP3 +25.0 dBm while requiring only 90 mA from a +5V supply.