Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Desnica, U.; Buljan, M.; Dubcek, P.; Siketic, Z.; Radovic, I.; Bernstorff, S.; Serincan, U.; Turan, RAŞİT

doi:10.1016/j.nimb.2006.03.151

Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Desnica U. V., Buljan M., Dubcek P., Siketic Z., Radovic I. B., Bernstorff S., ...Daha Fazla

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.249, ss.843-846, 2006 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 249
Basım Tarihi: 2006
Doi Numarası: 10.1016/j.nimb.2006.03.151
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.843-846
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Ge quantum dots embedded in SiO2 have been obtained by implantation of Ge ions in the 10(16)-10(17) cm(-2) dose range, followed by post-implantation annealing in the temperature range T-a = 300-1000 degrees C. Using Rutherford back-scattering, grazing incidence X-ray diffraction and grazing incidence small angle X-ray scattering it was found that Ge-QDs are synthesized as discrete, spherical QDs, with radius ranging from 1.7 to 10 nm, depending on dose and T-a. For T-a above 800 degrees C the Ge atom diffusion becomes considerable, leading to a strong increase of both size and size distribution of Ge QDs, but still without sizeable loss of Ge atoms from the implanted layer. (c) 2006 Elsevier B.V. All rights reserved.