Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

Aslan B., Turan R., Liu H., Baribeau J., Buchanan M., Chow-Chong P.

APPLIED PHYSICS B-LASERS AND OPTICS, vol.78, no.2, pp.225-228, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 78 Issue: 2
  • Publication Date: 2004
  • Doi Number: 10.1007/s00340-003-1343-z
  • Journal Name: APPLIED PHYSICS B-LASERS AND OPTICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.225-228
  • Middle East Technical University Affiliated: Yes

Abstract

This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si1-xGex/Si junctions with x=0.1 and x=0.23, allows the tuning of the cut-off wavelength from 19.9 mum to 11.7 mum for 10 K and 50 K, respectively.