Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

Aslan B., Turan R. , Liu H., Baribeau J., Buchanan M., Chow-Chong P.

APPLIED PHYSICS B-LASERS AND OPTICS, cilt.78, ss.225-228, 2004 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 78 Konu: 2
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1007/s00340-003-1343-z
  • Sayfa Sayıları: ss.225-228


This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si1-xGex/Si junctions with x=0.1 and x=0.23, allows the tuning of the cut-off wavelength from 19.9 mum to 11.7 mum for 10 K and 50 K, respectively.