Indium rich InGaN solar cells grown by MOCVD

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Cakmak H., Arslan E., Rudzinski M., Demirel P., ÜNALAN H. E. , Strupinski W., ...Daha Fazla

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.25, sa.8, ss.3652-3658, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Konu: 8
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1007/s10854-014-2070-4
  • Sayfa Sayıları: ss.3652-3658


This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm(2), open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm(2)) at room temperature for finished devices was 0.66 %.