Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition


Imer B. , Wu F., Cravens M. D. , Speck J. S. , DenBaars S. P.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, cilt.45, sa.11, ss.8644-8647, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Konu: 11
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1143/jjap.45.8644
  • Dergi Adı: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • Sayfa Sayıları: ss.8644-8647

Özet

We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar (11 (2) over bar0) a-plane heteroepitaxial planar GaN films. The threading dislocation density of m-GaN on m-plane 6H-SiC was one order of magnitude lower than that of a-GaN on a-plane 6H-SiC.