Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition


Imer B. , Wu F., Cravens M. D. , Speck J. S. , DenBaars S. P.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol.45, no.11, pp.8644-8647, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 11
  • Publication Date: 2006
  • Doi Number: 10.1143/jjap.45.8644
  • Title of Journal : JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • Page Numbers: pp.8644-8647
  • Keywords: nonpolar nitrides, (1100) m-plane GaN on m-plane SiC, (1120) a-plane GaN on a-plane SiC, metalorganic chemical vapor deposition (MOCVD), GaN heteroepitaxial growth, m-GaN, AlN nucleation layer, nonpolar GaN, GaN facet stability, m-GaN, MULTIPLE-QUANTUM WELLS, OVERGROWN A-PLANE, LIGHT-EMITTING-DIODES, PHASE EPITAXY, SAPPHIRE

Abstract

We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar (11 (2) over bar0) a-plane heteroepitaxial planar GaN films. The threading dislocation density of m-GaN on m-plane 6H-SiC was one order of magnitude lower than that of a-GaN on a-plane 6H-SiC.