Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage

Han Z., Lee H., BAYRAM B., Bayram C.

2022 Compound Semiconductor Week, CSW 2022, Michigan, United States Of America, 1 - 03 June 2022 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/csw55288.2022.9930383
  • City: Michigan
  • Country: United States Of America
  • Keywords: Diamond, Metal semiconductor field effect transistors, Schottky barrier diodes
  • Middle East Technical University Affiliated: Yes


© 2022 IEEE.The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond's extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm-1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm-1k-1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond's advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.